p a g e 1 o f 4 w w w . n e l l s e m i . c o m r o h s r o h s s e m i c o n d u c t o r n k d 2 5 0 / n k j 2 5 0 / n k c 2 5 0 s e r i e s n ell semiconductors ap plication s ? rectifying bri dge for large motor dri ves ? r br idge for large ups featu res ? current capability ? surge capabil ity ? volt age ratings up to 200 0 v ? 3000 v isol ating volt age wi th non - toxic substrat e rms ? ind ustrial standard p ackage ? c ompliant to rohs standard diodes, 2 50 a ( magn - a - p ak power module s ) pr oduc t summar y i f ( av ) 250 a modul es - diode , high voltage type major ra tin gs an d char acteristics symbol char acter istics v alues units i f ( av ) 250 t c 100 i f ( rms ) 392 t c 100 i fsm 50 hz a 60 hz 2 i t 50 hz 60 hz 6050 rrm range t stg , t j range 2 i t a a c c c v - 40 to 150 800 to 2000 552 605 11600 11000 2 ka t - - + + + ~ n k d n k j - + - n k c ? recti fying power suppli er ? frequ ency con verte rs m a g n a - p a k a l l d i m e n s i o n s i n m i l l i m e t e r s 5 3 + 1 3 8 + 1 2 5 + 1 4 7 + 1 5 2 + 1 3 9 + 1 6 0 + 3 3 7 + 1 2 5 + 1 2 2 . 5 8 0 9 2 1 1 5 + 3 4 - ? 6 . 5 2 . 8 x 0 . 8 + 0 . 1 3 - m 8 s c r e w s 2 3 . 5 3 5 ? ul approved file e320098 2 k a s
p a g e 2 o f 4 w w w . n e l l s e m i . c o m r o h s r o h s s e m i c o n d u c t o r n ell semiconductors elec tric al spec ific a tions vol t age ra ting s type number vol t age code v rrm , maximum repetitive peak reverse vol t age v v rsm , maximum non - repetitive peak reverse vol t age v i rrm maximum a t t j maximum ma nkd 250 08 800 900 20 12 1200 1300 16 1600 1700 20 2000 2100 for w ard cond uctio n p arame ter symbol test conditions v alues units maximum average forward current at case temperature i f ( av ) 180 conduction , half sine wave 250 100 maximum rms forward current i f ( rms ) 180 conduction , half sine wave at t c = 100 c maximum peak , one - cycl e forwar d , non - repetitive surge curr ent i fsm t = 10 ms no voltage reapplie d sinusoidal half wave , initial t j = t j maximum 11.0 ka t = 8.3 ms maximum i 2 t for fusing t = 10 ms 605 ka 2 s t = 8.3 ms t = 10 ms 100 % v rrm reapplie d 424 t = 8.3 ms maximum 2 i t for fusi ng maximum forward voltage drop i pk = 1000 a , t j = 25 c 390 552 2 i t v 1.40 2 ka t 6050 2 i t v f m t = 0 . 1 m s t o 1 0 m s , n o v o l t a g e r e a p p l i e d 11.6 a 392 c a bloc king p arame ter symbol test condition s v alues units rms insulation voltage v ins t = 1 s 3000 v maximum peak reverse and - stat e leakage curren t i rrm t j = t j maximum , rated v rrm applied 20 ma t j = 25 c a 20 n k j 2 5 0 n k c 2 5 0 n k d 2 5 0 / n k j 2 5 0 / n k c 2 5 0 s e r i e s t hermal and mechan ical spec ifica tions p arameter symbol test conditions v alue s units maximum junc tion operating and stora ge temperat ure range t j , t stg - 40 to 150 c maximum therm al resistanc e , junction to ca se per junction r thjc dc operation 0. 14 k / w maximum therm al resistance , case to heatsink r thc - hs 0.044 mounting torque 10 % map to heatsink, m6 a mounting compound is recommend ed and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound . 4 nm busbar to map, m8 12 approximate weight 900 g case style see dimens ions - link at the end of datasheet magn - a - pak
r o h s r o h s s e m i c o n d u c t o r n ell semiconductors n k d 2 5 0 / n k j 2 5 0 / n k c 2 5 0 s e r i e s ord ering inform ation table 1 - module type: nkd.nkj and nkc for (diode + diode) module 2 3 - current rating : i f ( a v ) - v oltage code x 100 = v rrm device code nkd 1 6 2 5 0 / 3 2 1 f i g . 1 o n - s t a t e c u r r e n t v s . v o l t a g e c h a r a c t e r i s t i c t r a n s i e n t t h e r m a l i m p e d a n c e ( j u n c t i o n - c a s e ) f i g . 2 p o w e r c o n s u m p t i o n v s . a v e r a g e c u r r e n t f i g . 3 c a s e t e m p e r a t u r e v s . o n - s t a t e a v e r a g e c u r r e n t f i g . 4 o n - s t a t e p e a k v o l t a g e ( v ) t r a n s i e n t t h e r m a l i m p e d a n c e ( c / w ) m a x i m u m p o w e r c o n s u m p t i o n ( w ) c a s e t e m p e r a t u r e ( c ) o n - s t a t e c u r r e n t ( a ) t i m e ( s ) 3 0 6 0 1 2 0 5 0 1 0 0 1 5 0 2 0 0 2 5 0 3 0 0 1 8 0 0 . 5 1 1 . 5 2 2 . 5 3 3 . 5 1 0 0 1 0 0 0 1 0 0 0 0 0 0 . 0 0 1 0 0 . 1 0 . 1 1 1 0 0 . 0 3 0 . 0 6 0 . 0 9 0 . 1 2 0 . 1 5 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 1 0 0 0 5 0 1 5 0 2 0 0 2 5 0 3 0 0 4 0 0 6 0 8 0 1 2 0 1 4 0 1 6 0 1 0 0 9 0 1 2 0 1 8 0 t = 1 5 0 c j 9 0 6 0 3 0 0 1 8 0 c o n d u c t i o n a n g l e 0 1 8 0 c o n d u c t i o n a n g l e p a g e 3 o f 4 w w w . n e l l s e m i . c o m o n - s t a t e a v e r a g e c u r r e n t ( a ) o n - s t a t e a v e r a g e c u r r e n t ( a )
r o h s r o h s s e m i c o n d u c t o r n ell semiconductors n k d 2 5 0 / n k j 2 5 0 / n k c 2 5 0 s e r i e s o n - s t a t e s u r g e c u r r e n t v s . c y c l e s f i g . 5 2 i t c h a r a c t e r i s t i c f i g . 6 o n - s t a t e s u r g e c u r r e n t ( k a ) ( ) 2 i t 1 0 3 a 2 s c y c l e s @ 5 0 h z t i m e ( m s ) 1 1 0 1 0 0 2 4 6 8 1 0 1 2 1 1 0 1 5 0 3 5 0 2 5 0 4 5 0 5 5 0 6 5 0 p a g e 4 o f 4 w w w . n e l l s e m i . c o m
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